Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier
The phenomenon of efficiency droop is comprehensively investigated in an asymmetric GaN-based laser diode (LD). Numerical simulations and experiments are both conducted. It is found that with the introduction of a sandwiched GaN/InAlN/GaN lower quantum barrier (LQB) instead of the bulk GaN LQB in an...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8515048/ |