Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier

Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier

The phenomenon of efficiency droop is comprehensively investigated in an asymmetric GaN-based laser diode (LD). Numerical simulations and experiments are both conducted. It is found that with the introduction of a sandwiched GaN/InAlN/GaN lower quantum barrier (LQB) instead of the bulk GaN LQB in an...

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Bibliographic Details
Main Authors: Tian Lan, Guangzheng Zhou, Ying Li, Congcong Wang, Zhiyong Wang
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
Asymmetric GaN LD
efficiency droop
hole overflow
wall-plug efficiency
Online Access:https://ieeexplore.ieee.org/document/8515048/

Internet

https://ieeexplore.ieee.org/document/8515048/

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