A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode

A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode

Abstract An AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD) with trench Schottky anode and hybrid trench cathode has been proposed and experimentally demonstrated on silicon substrate. The Schottky barrier diode (SBD) integrated in the anode exhibits a turn-on voltage of 0.7 V a...

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Bibliographic Details
Main Authors: Anbang Zhang, Qi Zhou, Chao Yang, Yuanyuan Shi, Wanjun Chen, Zhaoji Li, Bo Zhang
Format: Article
Language:English
Published: SpringerOpen 2019-01-01
Series:Nanoscale Research Letters
Subjects:
AlGaN/GaN heterostructure
Reverse blocking current regulating diode (RB-CRD)
Schottky barrier diode (SBD)
Online Access:http://link.springer.com/article/10.1186/s11671-019-2860-y

Internet

http://link.springer.com/article/10.1186/s11671-019-2860-y

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