Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4° misoriented from c-plane toward <...

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Bibliographic Details
Main Authors: Teng Jiang, Shengrui Xu, Jincheng Zhang, Peixian Li, Jun Huang, Zeyang Ren, Jiaduo Zhu, Zhibin Chen, Ying Zhao, Yue Hao
Format: Article
Language:English
Published: AIP Publishing LLC 2016-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4944862

Internet

http://dx.doi.org/10.1063/1.4944862

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