Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing

Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing

This paper reports the design and characterization of partially-filled-gap capacitive MEMS resonators for distributed mass sensing applications. By filling the gap with HfO2, the coupling coefficient between electrode-resonator increases by ×6.67 times and the motional resistance decreases by ×12 ti...

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Bibliographic Details
Main Authors: Mariazel Maqueda Lopez, Emanuele Andrea Casu, Montserrat Fernandez-Bolanos, Adrian Mihai Ionescu
Format: Article
Language:English
Published: MDPI AG 2017-08-01
Series:Proceedings
Subjects:
micromechanical resonator
MEMS resonator
MEMS
microsystems
microfabrication
silicon on insulator
quality factor
resonance frequency
mass sensing
mass sensor
Atomic Layer Deposition (ALD)
high-k dielectric
hafnium oxide
Online Access:https://www.mdpi.com/2504-3900/1/4/391

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https://www.mdpi.com/2504-3900/1/4/391

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