Efeitos da adição de átomos de Mn na rede do GaN via métodos de estrutura eletrônica Indirect effects of the Mn incorporation on the electronic structure of nanocrystalline GaN

Efeitos da adição de átomos de Mn na rede do GaN via métodos de estrutura eletrônica Indirect effects of the Mn incorporation on the electronic structure of nanocrystalline GaN

<abstract language="eng">A computational method to simulate the changes in the electronic structure of Ga1-xMn xN was performed in order to improve the understanding of the indirect contribution of Mn atoms. This periodic quantum-mechanical method is based on density functional theor...

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Bibliographic Details
Main Authors: Melânia Cristina Mazini, Julio Ricardo Sambrano, Alberto Adriano Cavalheiro, Douglas Marcel Gonçalves Leite, José Humberto Dias da Silva
Format: Article
Language:English
Published: Sociedade Brasileira de Química 2010-01-01
Series:Química Nova
Subjects:
GaN
diluted magnetic semiconductor (DMS)
DFT
Online Access:http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0100-40422010000400013

Internet

http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0100-40422010000400013

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