Redox-controlled memristive switching in the junctions employing Ti reactive electrodes

by Haitao Li, Yidong Xia, Hanni Xu, Lifei Liu, Xuefei Li, Zhenjie Tang, Xiangzhong Chen, Aidong Li, Jiang Yin, Zhiguo Liu
Published 2011-09-01

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

by Wenchao Xu, Yang Zhang, Zhenjie Tang, Zhengjie Shao, Guofu Zhou, Minghui Qin, Min Zeng, Sujuan Wu, Zhang Zhang, Jinwei Gao, Xubing Lu, Junming Liu
Published 2017-04-01