Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers

by Akihiro Ohtake, Takaaki Mano, Kazutaka Mitsuishi, Yoshiki Sakuma
Published 2018-11-01

Double-Sided Nonalloyed Ohmic Contacts to Si-doped GaAs for Plasmoelectronic Devices

by Takaaki Mano, Hideki T. Miyazaki, Takeshi Kasaya, Takeshi Noda, Yoshiki Sakuma
Published 2019-04-01

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two‐Dimensional Electronics

by Shisheng Li, Jinhua Hong, Bo Gao, Yung‐Chang Lin, Hong En Lim, Xueyi Lu, Jing Wu, Song Liu, Yoshitaka Tateyama, Yoshiki Sakuma, Kazuhito Tsukagoshi, Kazu Suenaga, Takaaki Taniguchi
Published 2021-06-01