High Mobility In_0.53Ga_0.47As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes

by S. Yoshida, H. C. Lin, A. Vais, A. Alian, J. Franco, S. El Kazzi, Y. Mols, Y. Miyanami, M. Nakazawa, N. Collaert, H. Watanabe, A. Thean
Published 2017-01-01