Influence of Cd_хHg_1-хTe epitaxial layers defects on photo-electric parameters of matrix detector devices

by V. V. Arbenina, A. S. Kashuba, Е. V. Permikina
Published 2013-12-01

Estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on GaAs

by V. V. Arbenina, A. S. Kashuba, E. V. Permikina
Published 2014-10-01

Database on properties and technical characteristics of semiconductor materials

by T. V. Stol'nikova, K. Yu. Kolybanov, V. V. Arbenina
Published 2008-08-01

Computer modeling of processes of semiconductor technology through information-calculating system

by V. V. Arbenina, R. Kh. Akchurin, L. B. Berliner
Published 2015-06-01

The research of process of CdTe passivation coverings formation on epitaxial layers CdхHg1-хTe for creation of IRphotodetectors.

by V. V. Arbenina, T. V. Danilova, A. S. Kashuba, E. V. Permikina
Published 2007-10-01

The influence of the epitaxial layers surface morphology and polarity on quality of passivating coating and the parameters of arrays photosensitive devices on base Cd_хHg...

by I. D. Burlakov, A. S. Kashuba, S. V. Golovin, E. V. Permikina, V. V. Arbenina
Published 2009-08-01

High-resolution microscopy methods for surface morphology semiconductors investigation

by A. E. Mirofyanchenko, A. S. Kashuba, E. V. Pryanikova, N. I. Yakovleva, V. V. Arbenina
Published 2015-12-01

The study of morphology of heteroepytaxial structures on the basis of photosensitive layers Cd_XHg_1-XTe by electron probe analysis methods

by А. С. Kashuba, A. V. Zablotsky, E. V. Korostylev, A. A. Kuzin, E. V. Permikina, V. V. Arbenina
Published 2010-10-01