DEPTH MEASUREMENT OF DISRUPTED LAYER ON SILICON WAFER SURFACE USING AUGER SPECTROSCOPY METHOD

by V. A. Solodukha, A. I. Belous, G. G. Chyhir
Published 2016-08-01

Influence of rapid thermal treatment of the gate dielectric on the parameters of power field МОSFЕТ transistors

by V. A. Solodukha, U. A. Pilipenko, V. A. Gorushko
Published 2019-06-01

Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide

by V. A. Solodukha, V. A. Pilipenko, V. A. Gorushko
Published 2019-06-01

Formation of a gate dielectric of nanometer thickness by rapid thermal treatment

by N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, D. V. Shestovski
Published 2021-07-01

Reliability Express Control of the Gate Dielectric of Semiconductor Devices

by V. A. Solodukha, G. G. Chigir, V. A. Pilipenko, V. A. Filipenya, V. A. Gorushko
Published 2018-12-01