W‐Band MMIC chipset in 0.1‐μm mHEMT technology

by Jong‐Min Lee, Woo‐Jin Chang, Dong Min Kang, Byoung‐Gue Min, Hyung Sup Yoon, Sung‐Jae Chang, Hyun‐Wook Jung, Wansik Kim, Jooyong Jung, Jongpil Kim, Mihui Seo, Sosu Kim
Published 2020-08-01

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors

by Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, Seung Mo Kim, Sang Kyung Lee, Byoung Hun Lee, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Published 2020-10-01

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

by Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Published 2020-10-01