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  1. 1
    The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe2 transistors through Ar+ ion-beam generated surface defects
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  2. 2
    Improved Distribution of Resistance Switching Through Localized Ti-Doped NiO Layer With InZnO<sub>x</sub>/CuO<sub>x</sub> Oxide Diode
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