Impact of String Pattern on the Threshold-Voltage Spread of Program-Inhibited Cell in NAND Flash

by Yung-Yueh Chiu, Minoru Aoki, Masaru Yano, Riichiro Shirota
Published 2016-01-01

Exploring idling time in NAND Flash Memory – Program Voltage, Hydrogen concentration

by Tsai, Hung-Te-En, 蔡閎德恩
Published 2019

Characterization of the Trap State in the Tunneling Oxide of Non-volatile Memory under Program/Erase Cycling

by Yang, Bo-Jun, 楊柏俊
Published 2019

Evaluation of the Gm degradation during the idling time period between Program/Erase in NAND Flash Memory

by Chang, Kai-Chieh, 張凱傑
Published 2019

Statistical Investigation of Transconductance Distribution in Program/Erase Cycling of NAND Flash

by Lin, I-Chun, 林怡鈞
Published 2018

The Effect of Hydrogen Concentration on NAND Flash Memory Reliability

by Yang,Jhih-Siang, 楊智翔
Published 2017

W/E Bias and Oxidation Process Dependence in Endurance of NAND Flash Reliability

by Chang, Chia-Wei, 張嘉維
Published 2017

Exploring Retention Characteristics of NAND Flash memory under PGM and Erase state

by Lin, Sang-Ching, 林三景
Published 2017

Study of Injection Charge Uniformity and Efficiency in P-Channel SONOS Memory

by Lee, Yen-Hui, 李彥輝
Published 2012

W/E Cycling Bias and Oxidation Process Dependence in Endurance of NAND-Flash Reliability

by Wu, Yu-Ting, 吳昱廷
Published 2016

Program/Erase Characteristics Affected by Hydrogen Concentration during Annealing in NAND Flash Memory

by Lin, Chen-Han, 林承翰
Published 2016

Anomalous subthreshold swing and transconductance recovery within early program erase cycling of the NAND flash memory

by Liu, Chen-Hung, 劉承泓
Published 2016

W/E Cycling Temperature dependence of NAND-Flash reliability

by Sen-Fei Ng, 吳程輝
Published 2014