Dielectric Relaxation of Lanthanide-Based Ternary Oxides: Physical and Mathematical Models

by Chun Zhao, C. Z. Zhao, Jing Tao, M. Werner, S. Taylor, P. R. Chalker
Published 2012-01-01

Extrinsic and Intrinsic Frequency Dispersion of High-<em>k</em> Materials in Capacitance-Voltage Measurements

by S. Taylor, P. R. Chalker, P. Taechakumput, M. Werner, C. Zhao, C. Z. Zhao, J. Tao
Published 2012-06-01

Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics

by P. R. Chalker, P. A. Marshall, K. Dawson, I. F. Brunell, C. J. Sutcliffe, R. J. Potter
Published 2015-01-01

Band alignments at Ga2O3 heterojunction interfaces with Si and Ge

by J. T. Gibbon, L. Jones, J. W. Roberts, M. Althobaiti, P. R. Chalker, Ivona Z. Mitrovic, V. R. Dhanak
Published 2018-06-01

Thermal Stability of Neodymium Aluminates High-κ Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors

by P. Taechakumput, C. Z. Zhao, S. Taylor, M. Werner, P. R. Chalker, J. M. Gaskell, H. C. Aspinall, A. C. Jones, Susu Chen
Published 2012-01-01