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Nicolas Wichmann
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Nicolas Wichmann
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Nicolas Wichmann
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1
Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET.
by
Mohd F Mohd Razip Wee
,
Arash Dehzangi
,
Sylvain Bollaert
,
Nicolas
Wichmann
,
Burhanuddin Y Majlis
Published 2013-01-01
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Article
2
100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
by
Cyrille Gardès
,
Sonia Bagumako
,
Ludovic Desplanque
,
Nicolas
Wichmann
,
Sylvain Bollaert
,
François Danneville
,
Xavier Wallart
,
Yannick Roelens
Published 2014-01-01
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Article
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