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Mehedi, M.
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Mehedi, M.
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Mehedi, M.
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1
Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use-V-dd
by
Asenov, A
,
Gao, R
,
Ji, ZG
,
Kaczer, B
,
Manut, A
,
Mehedi
,
M
,
Vigar, D
,
Zhang, JF
,
Zhang, WD
Published 2019
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Article
2
Trigger-When-Charged: A technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-V dd
by
Asenov, A.
,
Gao, R.
,
Ji, Z.
,
Kaczer, B.
,
Manut, A.
,
Mehedi
,
M
.
,
Vigar, D.
,
Zhang, J.F
,
Zhang, W.D
Published 2019
Call Number:
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Related Subjects
Fluctuations
DEGRADATION
Device fluctuation
Jitters
Low power electronics
MODEL
MOSFETS
Negative bias temperature instability
Negative-bias temperature instability (NBTI)
Positive charges
Random telegraph noise
Random telegraph noise (RTN)
TO-DEVICE VARIATION
Telegraph
Threshold voltage
Within-a-device-fluctuation
Yield
jitters
negative-bias temperature instability (NBTI)
positive charges
random telegraph noise (RTN)
within-a-device-fluctuation
yield
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