The demonstration of the magnetic Ge metal-oxide-semiconductor field-effect transistor

by M.-H. Liao, S.-C. Huang
Published 2015-02-01

The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators

by M.-H. Liao, C. Lien
Published 2015-05-01

The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and expe...

by M.-H. Liao, C.-H. Chen
Published 2013-07-01

Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectrosco...

by M.-H. Liao, C.-H. Chen
Published 2013-04-01

Erratum: “The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modelin...

by M.-H. Liao, C.-H. Chen
Published 2015-04-01

Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In0.53Ga0.47As field-effect transistors

by M.-H. Liao, P.-K. Chen
Published 2013-09-01

The demonstration of a D-SMT stressor on Ge planer n-MOSFETs

by M.-H. Liao, P.-G. Chen
Published 2015-04-01

The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages

by M.-H. Liao, C.-P. Hsieh, C.-C. Lee
Published 2017-05-01

The investigation of the diameter dimension effect on the Si nano-tube transistors

by M.-H. Liao, C.-H. Yeh, C.-C. Lee, C.-P. Wang
Published 2016-03-01

The demonstration of nonlinear analytic model for the strain field induced by thermal copper filled TSVs (through silicon via)

by M. H. Liao, M.-Y. Yu, G.-H. Liu, C.-H. Chen, T.-K. Hsu
Published 2013-08-01

Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices

by M.-H. Liao, K.-C. Huang, F.-A. Tsai, C.-Y. Liu, C. Lien, M.-H. Lee
Published 2018-01-01

Ferroelectric HfZrO_x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

by Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee
Published 2018-01-01