Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

by V. G. Vorobiov, O. V. Konoreva, Ye. V. Malyi, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska
Published 2015-10-01

Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons

by O. V. Konoreva, E. V. Maliy, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska
Published 2014-12-01

Surface distribution of the emitting intensity of GaP light-emitting diodes

by O. V. Konoreva, P. G. Litovchenko, E. V. Maliy, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska
Published 2013-06-01

Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

by O. M. Hontaruk, O. V. Konoreva, М. V. Lytovchenko, E. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk
Published 2015-04-01

Effect of neutron irradiation on characteristics of power ІnGaN/GaN light-emitting diodes

by A. I. Vlasenko, V. P. Veleschuk, Z. K. Vlasenko, M. P. Kisselyuk, P. G. Lytovchenko, I. V. Petrenko, V. P. Tartachnyk, M. B. Pinkovska
Published 2015-12-01