Relationship between electrical properties and interface structures of SiO2/4H-SiC prepared by dry and wet oxidation

by Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Hiroshi Oji, Kikuo Yamabe
Published 2019-10-01

Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface

by Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Takahiro Nagata, Shigenori Ueda, Kikuo Yamabe
Published 2019-04-01