The correlation between parameters of gallium arsenic epitaxy layers and technology of growth’s process

by Karimov A. V., Yodgorova D. M., Yakubov E. N.
Published 2009-10-01

Gallium arsenide p+–n–p+-structures with impoverished base area

by Karimov A. V., Yodgorova D. M., Abdulkhaev O. A.
Published 2009-06-01

Highly sensitive photodetector based on ge double-barrier punch-through structure

by Abdulkhaev O. A., Yodgorova D. M., Karimov A. V., Kuliyev S. M.
Published 2015-08-01

Abnormal photovoltaic effect in structure with a barrier Shottky-Mott's

by Karimov A. V., Yodgorova D. M., Saidova R. A., Giyasova F. A.
Published 2008-02-01

Some photo-electric features of the characteristics two-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au-structure

by Yodgorova D. M., Karimov A. V., Giyasova F. A., Saidova R. A.
Published 2008-06-01

Multifunctional homojunction gallium arsenide n–p–m-structure

by Karimov A. V., Yodgorova D. M., Abdulkhaev O. A., Giyasova F. A., Nazarov J. T.
Published 2009-11-01

Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure

by Abdulkhaev O. A., Yodgorova D. M., Karimov A. V., Yakubov A. A., Kuliyev Sh. M.
Published 2018-06-01

Optimization of the concentration's distribution of the carriers on thickness of epitaxial layers

by Karimov A. V., Yodgorova D. M., Giyasova F. A., Saidova R. A., Haydarov Sh. A.
Published 2007-12-01

Modification of barrier structure on the basis of pAlGaInAs–nGaAs by consecutively connected potential barriers

by Karimov A. V., Yodgorova D. M., Giyasova F. A., Abdulhaev O. A., Juraev D. R.
Published 2009-08-01

Research of the tolerable pulsed power of silicon p+–p–n+-structure

by Karimov A. V., Yodgorova D. M., Abdulhaev O. A., Karimov A. A., Asanova G. O.
Published 2011-12-01

Investigation of pulsed voltage limiters characteristics

by Karimov A. V., Yodgorova D. M., Rakhmatov A. Z., Skornyakov S. L., Petrov D. A., Abdulkhayev O. A.
Published 2012-06-01

Physicotechnological aspects of low-voltage suppressors developement on the silicon base

by Rakhmatov A. Z., Skorniakov S. L., Karimov A. V., Yodgorova D. M., Abdulkhayev O. A., Buzrukov U. M.
Published 2010-10-01

Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment

by Karimov A. V., Rakhmatov A. Z., Abdulkhaev O. A., Aripova U. H., Khidirnazarova A. Yu., Kuliyev Sh. M.
Published 2018-06-01

Some features of a current limiter on the field-effect transistor

by Karimov A. V., Djurayev D. R., Yodgorova D. M., Rakhmatov A. Z., Abdulkhayev O. A., Kamanov B. M., Turayev A. A.
Published 2011-04-01

Study on the formation of current characteristics of a silicon photodiode with rectifying barriers

by Karimov A. V., Yodgorova D. M., Giyasova F. A., Mirdzhalilova M. A., Asanova G. O., Abdulkhaev O. A., Mukhutdinov Zh. F.
Published 2013-02-01