Material-Device-Circuit Co-Design of 2-D Materials-Based Lateral Tunnel FETs

by Tarun Agarwal, Gianluca Fiori, Bart Soree, Iuliana Radu, Marc Heyns, Wim Dehaene
Published 2018-01-01

Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes

by Tarun kumar Agarwal, Bart Soree, Iuliana Radu, Praveen Raghavan, Giuseppe Iannaccone, Gianluca Fiori, Wim Dehaene, Marc Heyns
Published 2017-07-01

Relation between film thickness and surface doping of MoS2 based field effect transistors

by César J. Lockhart de la Rosa, Goutham Arutchelvan, Alessandra Leonhardt, Cedric Huyghebaert, Iuliana Radu, Marc Heyns, Stefan De Gendt
Published 2018-05-01

Impact of device scaling on the electrical properties of MoS2 field-effect transistors

by Goutham Arutchelvan, Quentin Smets, Devin Verreck, Zubair Ahmed, Abhinav Gaur, Surajit Sutar, Julien Jussot, Benjamin Groven, Marc Heyns, Dennis Lin, Inge Asselberghs, Iuliana Radu
Published 2021-03-01

Tunneling Transistors Based on MoS₂/MoTe₂ Van der Waals Heterostructures

by Yashwanth Balaji, Quentin Smets, Cesar Javier Lockhart De La Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis H. C. Lin, Cedric Huyghebaert, Iuliana Radu, Dan Mocuta, Guido Groeseneken
Published 2018-01-01