Suppression of Punch-Through Current in 3 kV 4H-SiC Reverse-Blocking MOSFET by Using Highly Doped Drift Layer

by Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto
Published 2018-01-01