In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application

by Christoph Doering, Johannes Strassner, Henning Fouckhardt
Published 2019-07-01

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

by Thomas H. Loeber, Dirk Hoffmann, Henning Fouckhardt
Published 2011-06-01

Theory, simulation, fabrication, and characterization of Galois scattering plates for the optical and the THz spectral range

by Henning Fouckhardt, Christoph Doering, Michael Jaax, Bert Laegel
Published 2021-06-01

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

by Johannes Strassner, Johannes Richter, Thomas Loeber, Christoph Doering, Henning Fouckhardt
Published 2021-01-01

Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)

by Guilherme Sombrio, Emerson Oliveira, Johannes Strassner, Johannes Richter, Christoph Doering, Henning Fouckhardt
Published 2021-04-01

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

by Ann-Kathrin Kleinschmidt, Lars Barzen, Johannes Strassner, Christoph Doering, Henning Fouckhardt, Wolfgang Bock, Michael Wahl, Michael Kopnarski
Published 2016-11-01