DC and RF characteristics optimization of AlGaN/GaN/BGaN/GaN/Si HEMT for microwave-power and high temperature application

by Moujahed GASSOUMI, Abdelhamid HELALI, Hassen MAAREF, Malek GASSOUMI
Published 2019-03-01

Effect of V/III ratio on the optical properties of (3 1 1)A and (3 1 1) B oriented InAlAs/InP heterostructures

by Badreddine Smiri, Ibtissem Fraj, Mohamed Bouzidi, Faouzi Saidi, Ahmed Rebey, Hassen Maaref
Published 2019-03-01

Evolution of InAs/GaAs QDs Size with the Growth Rate: A Numerical Investigation

by Bouraoui Ilahi, Manel Souaf, Mourad Baira, Jawaher Alrashdi, Larbi Sfaxi, Abdulaziz Alhazaa, Hassen Maaref
Published 2015-01-01

Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

by Manel Souaf, Mourad Baira, Olfa Nasr, Mohamed Helmi Hadj Alouane, Hassen Maaref, Larbi Sfaxi, Bouraoui Ilahi
Published 2015-07-01

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

by Bilel Azeza, Mohamed Helmi Hadj Alouane, Bouraoui Ilahi, Gilles Patriarche, Larbi Sfaxi, Afif Fouzri, Hassen Maaref, Ridha M’ghaieth
Published 2015-07-01

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

by Maher Ezzedini, Tarek Hidouri, Mohamed Helmi Hadj Alouane, Amor Sayari, Elsayed Shalaan, Nicolas Chauvin, Larbi Sfaxi, Faouzi Saidi, Ahmed Al-Ghamdi, Catherine Bru-Chevallier, Hassen Maaref
Published 2017-07-01