Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors

by Oves Badami, Cristina Medina-Bailon, Salim Berrada, Hamilton Carrillo-Nunez, Jaeyhun Lee, Vihar Georgiev, Asen Asenov
Published 2019-05-01

Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation

by Cristina Medina-Bailon, Hamilton Carrillo-Nunez, Jaehyun Lee, Carlos Sampedro, Jose Luis Padilla, Luca Donetti, Vihar Georgiev, Francisco Gamiz, Asen Asenov
Published 2020-02-01

Variability Predictions for the Next Technology Generations of <i>n</i>-type Si_<i>x</i>Ge_1−<i>x</i> Nanowire MOSFETs

by Jaehyun Lee, Oves Badami, Hamilton Carrillo-Nuñez, Salim Berrada, Cristina Medina-Bailon, Tapas Dutta, Fikru Adamu-Lema, Vihar P. Georgiev, Asen Asenov
Published 2018-12-01

Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

by Toufik Sadi, Cristina Medina-Bailon, Mihail Nedjalkov, Jaehyun Lee, Oves Badami, Salim Berrada, Hamilton Carrillo-Nunez, Vihar Georgiev, Siegfried Selberherr, Asen Asenov
Published 2019-01-01