On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs

by Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Giovanni Verzellesi
Published 2021-06-01

Evaluation of <i>V</i>_TH and <i>R</i>_ON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

by Marcello Cioni, Alessandro Bertacchini, Alessandro Mucci, Nicolò Zagni, Giovanni Verzellesi, Paolo Pavan, Alessandro Chini
Published 2021-02-01

Modeling a Thick Hydrogenated Amorphous Silicon Substrate for Ionizing Radiation Detectors

by Jeremy Alexander Davis, Maurizio Boscardin, Michele Crivellari, Livio Fanò, Matthew Large, Mauro Menichelli, Arianna Morozzi, Francesco Moscatelli, Francesco Moscatelli, Maria Movileanu-Ionica, Daniele Passeri, Daniele Passeri, Marco Petasecca, Mauro Piccini, Alessandro Rossi, Andrea Scorzoni, Andrea Scorzoni, Bailey Thompson, Giovanni Verzellesi, Giovanni Verzellesi, Nicolas Wyrsch
Published 2020-05-01

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

by Marco Calciati, Michele Goano, Francesco Bertazzi, Marco Vallone, Xiangyu Zhou, Giovanni Ghione, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Enrico Bellotti, Giovanni Verzellesi, Dandan Zhu, Colin Humphreys
Published 2014-06-01