Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons

by A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko
Published 2008-08-01

Dependence of the defect introduction rate on irradiation dose of p-Si by fast-pile neutrons

by A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko
Published 2007-06-01

Radiation hardness of silicon doped by germanium with high concentration of free oxygen

by M. D. Varentsov, G. P. Gaidar, A. P. Dolgolenko, P. G. Litovchenko
Published 2006-06-01

Influence of the equation of state of matter and ion beam characteristics on target heating and compression

by N. A. Tahir, A. Shutov, D. Varentsov, P. Spiller, S. Udrea, D. H. H. Hoffmann, I. V. Lomonosov, J. Wieser, M. Kirk, R. Piriz, V. E. Fortov, R. Bock
Published 2003-02-01

Possibilities of increase of radiation firmness of semiconductor materials

by P. G. Litovchenko, L. I. Barabash, S. V. Berdnichenko, D. Bizello, M. D. Varentsov, V. I. Varnina, A. A.Groza, O. P. Dolgolenko, A. Ya. Karpenko, T. I. Kibkalo, V. F. Lastovetsky, A. P. Litovchenko, V. N. Pidtynnykh, L. A. Polivtsev, S. B. Smirnov, M. I. Starchik
Published 2008-08-01