Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

by Clint D. Frye, Scott B. Donald, Catherine E. Reinhardt, Rebecca J. Nikolic, Lars F. Voss, Sara E. Harrison
Published 2021-02-01

Design considerations for three-dimensional betavoltaics

by John W. Murphy, Lars F. Voss, Clint D. Frye, Qinghui Shao, Kareem Kazkaz, Mark A. Stoyer, Roger A. Henderson, Rebecca J. Nikolic
Published 2019-06-01