Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

by Tao Li, Bensong Wan, Gang Du, Baoshun Zhang, Zhongming Zeng
Published 2015-05-01

Fabrication of Spin-Transfer Nano-Oscillator by Colloidal Lithography

by Bin Fang, Jiafeng Feng, Hongxiang Wei, Xiufeng Han, Baoshun Zhang, Zhongming Zeng
Published 2015-01-01

High-efficiency all-dielectric metalenses for multi-focus with arbitrary polarization

by Long Jiang, Chen Chen, Yiqun Wang, Dan Fang, Kexue Li, Baoshun Zhang, Zhipeng Wei
Published 2021-04-01

Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

by Runze Lin, Desheng Zhao, Guohao Yu, Xiaoyan Liu, Dongdong Wu, Erdan Gu, Xugao Cui, Ran Liu, Baoshun Zhang, Pengfei Tian
Published 2020-10-01

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

by Liang Song, Kai Fu, Jie Zhao, Guohao Yu, Ronghui Hao, Xiaodong Zhang, Fu Chen, Yaming Fan, Yong Cai, Baoshun Zhang
Published 2018-03-01

Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

by Bin Fang, Jiafeng Feng, Huadong Gan, Roger Malmhall, Yiming Huai, Rongxin Xiong, Hongxiang Wei, Xiufeng Han, Baoshun Zhang, Zhongming Zeng
Published 2016-12-01

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)

by Shuiming Li, Yu Zhou, Hongwei Gao, Shujun Dai, Guohao Yu, Qian Sun, Yong Cai, Baoshun Zhang, Sheng Liu, Hui Yang
Published 2016-03-01

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

by Fu Chen, Shichuang Sun, Xuguang Deng, Kai Fu, Guohao Yu, Liang Song, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang
Published 2017-12-01

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

by Liang Song, Kai Fu, Zhili Zhang, Shichuang Sun, Weiyi Li, Guohao Yu, Ronghui Hao, Yaming Fan, Wenhua Shi, Yong Cai, Baoshun Zhang
Published 2017-12-01

Giant spin-torque diode sensitivity in the absence of bias magnetic field

by Bin Fang, Mario Carpentieri, Xiaojie Hao, Hongwen Jiang, Jordan A. Katine, Ilya N. Krivorotov, Berthold Ocker, Juergen Langer, Kang L. Wang, Baoshun Zhang, Bruno Azzerboni, Pedram Khalili Amiri, Giovanni Finocchio, Zhongming Zeng
Published 2016-04-01