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Aoto, K.
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Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection
by
Amano, H.
,
Aoto
,
K
.
,
Kushimoto, M.
,
Sasaoka, C.
,
Schowalter, L.J
,
Yoshikawa, A.
,
Zhang, Z.
Published 2022
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Related Subjects
AlGaN
AlN substrates
Aluminum gallium nitride
Aluminum nitride
Continuous wave lasing
Current injections
Diodes
Electric resistance
Electrode arrangement
Epitaxial structure
III-V semiconductors
Peak wavelength
Semiconductor alloys
Semiconductor lasers
Series resistances
Single crystals
Threshold-current density
Ultraviolet
Ultraviolet laser diodes
Ultraviolet lasers
laser diode
ultraviolet
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