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2Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronicsby Muhammad Fahlesa Fatahilah, Feng Yu, Klaas Strempel, Friedhard Römer, Dario Maradan, Matteo Meneghini, Andrey Bakin, Frank Hohls, Hans Werner Schumacher, Bernd Witzigmann, Andreas Waag, Hutomo Suryo WasistoGet full text
Published 2019-07-01
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