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121by C Kirsch, S Altazin, R Hiestand, T Beierlein, R Ferrini, T Offermans, L Penninck, B Ruhstaller“...The lateral charge transport in thin-film semiconductor devices is affected by the sheet resistance...”
Published 2017-06-01
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122by Said, Elias“...The discovery of semi-conducting organic materials has opened new possibilities for electronic...”
Published 2009
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Doctoral Thesis -
123by Yang, Li, Ph. D. Massachusetts Institute of Technology“... semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide...”
Published 2013
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124“...博士 === 國立中山大學 === 材料科學研究所 === 94 === The bandgaps of semiconductors are decreased with increasing...”
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127by Bingqi Sun, Jing Xu, Min Zhang, Longfei He, Hao Zhu, Lin Chen, Qingqing Sun, David Wei ZhangSubjects: “...two-dimensional materials...”
Published 2018-06-01
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Article -
128by Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Bernhard Stampfer, Marco M. Furchi, Thomas Mueller, Tibor GrasserSubjects: “...semiconductor device modeling...”
Published 2018-01-01
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129by Kang, ChangseokSubjects: “...Metal oxide semiconductor field-effect transistors...”
Published 2008
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130“... these piezoelectric devices according to the material dimensionality and present physics-based device models...”
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131Published 2023Subjects: “...semiconductors...”
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134by Redic, Richard CharlesSubjects: “...Optoelectronic devices Materials...”
Published 2009
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135by Pournia, SeyyedesadafSubjects: “...Photocurrent spectroscopy in nanomaterial devices...”
Published 2021
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136Published 2018Subjects: “...thin films, energy storage devices, electrospinning, metamaterials, electrodeposition, solar cells...”
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137“... device is promising for the development of low-cost, lithography-free, and high-performance flexible...”
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138Published 2019Subjects: “...2D material...”
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139by Ring, William Sean“... characteristics of devices and that the inclusion of strain in the active region of semiconductor laser diodes has...”
Published 1992
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140by Batool, Zahida“... and efficient mid-IR photonic devices. PL, PR and absorption revealed the cross-over (Llso~Eg) in this material...”
Published 2014
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