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22A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devicesby Baker, BryantSubjects: “...Power amplifiers -- Design and construction...”
Published 2014
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29by M. Bakowski, J. Lang, J-K. Lim, J. Hellén, T.M.J. Nilsson, B. Schodt, R. Poder, I. Belov, P. LeisnerSubjects: “...GaN-on SiC...”
Published 2018-07-01
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31by DiMarino, Christina MarieSubjects: “...power semiconductor devices...”
Published 2017
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33by Tabassum Natasha, Nikas Vasileios, Kaloyeros Alex E., Kaushik Vidya, Crawford Edward, Huang Mengbing, Gallis Spyros“... nanostructures composed of arrays of ultrathin silicon carbide (SiC) nanowires (NWs) that constitute scalable one...”
Published 2020-04-01
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34by Xiang Lu, Volker Pickert, Maher Al-Greer, Cuili Chen, Xiang Wang, Charalampos TsimenidisSubjects: “...reliability of power devices...”
Published 2021-08-01
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36by Vincenzo d’Alessandro, Lorenzo Codecasa, Antonio Pio Catalano, Ciro ScognamilloSubjects: “...multicellular power MOSFET...”
Published 2020-09-01
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37by Yue , NailiSubjects: “...power electronic device...”
Published 2014
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39by Drndarević Vujo R.Subjects: “...power electronics...”
Published 2014-01-01
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40A theoretical and experimental study of hydraulic power supplies using pressure-compensated pumps...by Pery, ArieSubjects: “...Engineering...”
Published 1983
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