Suggested Topics within your search.
Suggested Topics within your search.
Photoresists
7
Laser beams
3
Gray scale
2
Microstructure
2
3D microstructures
1
Acrylics
1
Aqua Regia
1
Aqua regia
1
Bacteria
1
Beam system
1
Blood
1
Contact position
1
Contrast curve
1
Curve fitting
1
Curve shape
1
Cutting edges
1
Differential scanning calorimetry
1
Diffraction
1
Diffraction intensity
1
Diffusion
1
Direct write lithography
1
Direct-write lithography
1
Electrodes
1
Electromotive force
1
Emulsification
1
Expensive equipments
1
Exposure correction
1
Fabrication
1
Feature sizes
1
Figure of merit
1
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621“... to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps...”
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622by Farrant, Luke“... in this thesis are studies of the etch characteristics of gallium nitride and photoresist in mixed boron...”
Published 2005
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623by Schøler, Mikkel“... calixarene-based photoresist was formulated and characterised. The resist demonstrated superior imaging...”
Published 2011
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624“... the photoresist as AZ series as the mask to etch the pattern. In ideal way, researcher might find out both...”
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625“... heterojunction indicated a good crystalline quality Spin-coating of a layer of photoresist before...”
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626“...~200nm. In order to fabricate a superior quality mask of photoresist(SU-8 2000.5) for wet etching...”
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627“... 14~15µC/cm), the choice of photoresist (NEB22 or DSE, the thickness of photoresist) and Proximity...”
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628by 陳君瑜“... photoresist on a silicon wafer for the modular packaging with LED. The RGB photo sensors used to detect...”
Published 2014
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629“...碩士 === 國立雲林科技大學 === 環境與安全衛生工程系碩士班 === 101 === A variety of organic solvents, such as photoresist...”
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630“... and n-type dopants, respectively. In device process, photoresist was first spin coated on the nanowire...”
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631“... mask was developed on a positive photoresist (s1813). The experiment will be used to obtain insights...”
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632“... disturbance , and the structural layer itself is defined by the micro mold, which consists of photoresist SU-8...”
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633“...×10.6 mm to 1.91×2.52 mm but lithography on AZ P4620 photoresist. In the process...”
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634“.... Once the masks are contaminated by residual photoresist (PR) or particle defects, the photolithography...”
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635“... by photoresist spin and RIE etching. The Ra before and after modification are 0.4nm and 12.4nm respectively...”
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636“... of manufacturing time between maximum concentration of ferrite oxide and different present of photoresist. After...”
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637by Tsung-Ming Tsai, 蔡宗鳴“... (POSG). In the traditional lithography process for integrated circuit manufacture, photoresist removal...”
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638by Rasgon, Stacy A., 1974-“... SEM micrographs of post-developed photoresist lines. However, the effect of plasma etch on sidewall...”
Published 2005
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639“... another projection lens to expose a photoresist layer coated on a substrate. The sample is carried...”
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640“... of 25μm, make about 2000 hole structures, photoresist structure with diameter of 25μm and depth of 35μm...”
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