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341“..., and then apply the batch etching method to improve the wafer thining. In the past, after the wafer grinding...”
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342by 余永圳“... Planning” and focus on domestic Semiconductor Etching Equipment as the research object. Through...”
Published 2009
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344“... dry type etching technique, in the blue light InGaN Light Emitting Diode P nitriding gallium surface...”
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345“... of wet etch equipment used in the optoelectronic industry, wherein, the cost of chemicals account...”
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346“... etching silicon porous silicon used herein, is different from the general use of copper backplane power...”
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349“... etching about p-GaN and n-GaN and do a series contrast. Instead of Pt electrode in past PEC etching, we...”
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351“... two, we make use of these AAO film with different aspect ratio as etching masks. Then, we use ICP...”
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352“...博士 === 國立中央大學 === 光電科學研究所 === 98 === In this research, the plasma etching mechanism has been...”
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353“... for researchers. A fast and simple fabrication method called metal-assist chemical etching was investigated...”
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354“... dry type etching technique, in the blue light InGaN Light Emitting Diode P nitriding gallium surface...”
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356“...碩士 === 國立成功大學 === 微機電系統工程研究所 === 94 === In this thesis, we study the etching technology of silicon...”
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357“...碩士 === 大葉大學 === 電機工程學系碩士班 === 94 === In this thesis, wet etching of GaN by photoelectrochemical...”
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358“...碩士 === 國立臺灣師範大學 === 工業教育學系 === 93 === Etching process is one of the key technologies...”
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359“... of on the hardness and elastic modulus of CoSixNy film is not significant. Both etch rate and selectivity can...”
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360“... to etch GaN epilayer. Etching rates were studied as a function of gas mixing ratio, ICP power and rf power...”
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