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  1. 261
    High power mid-wave and long-wave infrared light emitting diodes: device growth and applications
    by Koerperick, Edwin John
    Published 2009
    Subjects: “...Epitaxial Growth...”
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  2. 262
    Isomorphic grain inoculation in Ti-6Al-4V during additive manufacturing
    Subjects: “...Epitaxial growth...”
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    Article
  3. 263
    Effects of process parameters on microstructure and cracking susceptibility of a single crystal superalloy fabricated by directed energy deposition
    Subjects: “...Epitaxial growth...”
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  4. 264
    Molecular beam epitaxy grown III-nitride materials for high-power and high-temperture applications : impact of nucleation kinetics on material and device structure quality
    by Namkoong, Gon
    Published 2007
    Subjects: “...Epitaxial growth...”
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  5. 265
    High J<sub>c</sub> Epitaxial YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-δ</sub> Films Through a Non-Fluorine Approach for Coated Conductor Applications
    by Xu, Yongli
    Published 2004
    Subjects: “...epitaxial growth...”
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  6. 266
    Exploring Waveguiding Properties of Heavily Doped <formula formulatype="inline"><tex Notation="TeX">$ \hbox{Yb}^{3+}:\hbox{KLu}(\hbox{WO}_{4})_{2}$</tex></formula> Epitaxial Layers
    Subjects: “...Epitaxial growth...”
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    Article
  7. 267
    Design, Epitaxial Growth, Characterization and Applications of Nanoscale III-Nitride Light-Emitting Devices with High Performance
    by Lin, Da-Wei, 林大為
    Published 2015
    “...) region. With the development of epitaxial growth and nanoscale fabrication process, not only...”
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  8. 268
    The operator splitting method with semi-implicit spectral deferred correction for molecular beam epitaxial growth models
    by Zhifeng Weng, Yuping Zeng, Shuying Zhai
    Published 2020-09-01
    “... with semi-implicit spectral deferred correction method to simulate the molecular beam epitaxial growth...”
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    Article
  9. 269
    On Approximate Stationary Radial Solutions for a Class of Boundary Value Problems Arising in Epitaxial Growth Theory
    Subjects: “...epitaxial growth...”
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  10. 270
    Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition
    “... of the existence of the oxidized TiN layer, it does not affect the epitaxial growth of BiFeO3 films. On the other...”
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    Article
  11. 271
    Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy
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    Article
  12. 272
    Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach
    Subjects: “...epitaxial growth...”
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    Article
  13. 273
    Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics
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    Article
  14. 274
    Analysis of the Efficient High-Temperature in Situ Photoluminescence from GaN Layers during Epitaxial Growth
    by Christoph Prall, Daniel Erni, Dirk Rueter
    Published 2017-05-01
    “...Photoluminescence (PL) in GaN or InGaN layers monitored during epitaxial growth at high...”
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  15. 275
    Molecular beam epitaxial growth of CdTe and HgCdTe for new infrared and optoelectronic devices
    by Wagner, Brent K.
    Published 2007
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  16. 276
    Lateral SiGe heterojunction bipolar transistor by confined selective epitaxial growth: simulation and material growth
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  17. 277
    Molecular beam epitaxial growth and optical characterization of AlGaN nanowires with reduced substrate temperature
    by Y. Zhong, E. Berikaa, J. Lu, X. Yin, S. Zhao
    Published 2020-02-01
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    Article
  18. 278
    Molecular beam epitaxial growth, characterization, and nanophotonic device applications of InN nanowires on Si platform
    by Zhao, Songrui
    Published 2013
    “... have investigated the molecular beam epitaxial growth and the correlated surface electrical and optical...”
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  19. 279
    Light scattering measurements of surface morphology during molecular beam epitaxy growth of GaAs-based semiconductors
    by Lavoie, Christian
    Published 2009
    “... molecular beam epitaxy growth on GaAs epilayers. The light scattering measurements are compared with atomic...”
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  20. 280
    Study of GaN Epitaxial Growth on Sapphire (0001) and Silicon (111) by Molecule Beam Epitaxy System
    by Shih-Guo Shen, 沈詩國
    Published 2007
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