A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and Ga2O3 Semiconductors: Modelling and Performance Analysis

A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and Ga2O3 Semiconductors: Modelling and Performance Analysis

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In this paper, the performance of an active neutral point clamped (ANPC) inverter is evaluated, which is developed utilizing both silicon (Si) and gallium trioxide (Ga2O3) devices. The hybridization of semiconductor devices is performed since the production volume and fabrication of ultra-wide bandg...

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Bibliographic Details
Main Authors: Ansari, S (Author), Hasan, K (Author), Haw, LK (Author), Hussain, A (Author), Islam, J (Author), Lipu, MSH (Author), Meraj, ST (Author), Miah, MS (Author), Yahaya, NZ (Author)
Format: Article
Language:English
Published: 2021
Subjects:
fabrication
gallium trioxide
hybridization
inverter
neutral point clamped
power electronics
PWM
semiconductors
silicon
ultrawide bandgap
Online Access:View Fulltext in Publisher

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