Electrochemically deposited gallium oxide nanostructures on silicon substrates
We report a synthesis of beta-Ga2O3 nanostructures on Si substrate by electrochemical deposition using a mixture of Ga2O3, HCl, NH4OH, and H2O. The presence of Ga3+ ions contributed to the deposition of Ga2O3 nanostructures on the Si surface with the assistance of applied potentials. The morphologie...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Online Access: | View Fulltext in Publisher |
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