Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application
Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electro...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2018
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| Online Access: | View Fulltext in Publisher |
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