Changes in Electrical Properties of MOS Transistor Induced by Single 14 MeV Neutron

Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using i...

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Bibliographic Details
Main Authors: Abu Hassan, H (Author), Afishah, A (Author), Chee, FP (Author), Haider, FA (Author), Saafie, S (Author)
Format: Article
Language:English
Published: 2016
Online Access:View Fulltext in Publisher

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