Changes in Electrical Properties of MOS Transistor Induced by Single 14 MeV Neutron
Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using i...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2016
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| Online Access: | View Fulltext in Publisher |
| LEADER | 01177nam a2200157Ia 4500 | ||
|---|---|---|---|
| 001 | 10.1063-1.4940111 | ||
| 008 | 220223s2016 CNT 000 0 und d | ||
| 245 | 1 | 0 | |a Changes in Electrical Properties of MOS Transistor Induced by Single 14 MeV Neutron |
| 260 | 0 | |c 2016 | |
| 856 | |z View Fulltext in Publisher |u https://doi.org/10.1063/1.4940111 | ||
| 520 | 3 | |a Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using in-situ method during neutron irradiation. The average degradation of the gain current is 35 mA at maximum fluence of 2.0. 10(10) n/cm(2) while with an average of 25 mA at minimum fluence of 5.0. 10(8) n/cm(2). The change in channel current gain increased proportionally with neutron fluence, meanwhile drain saturation current decreased proportionally with the neutron fluence. | |
| 700 | 1 | 0 | |a Abu Hassan, H |e author |
| 700 | 1 | 0 | |a Afishah, A |e author |
| 700 | 1 | 0 | |a Chee, FP |e author |
| 700 | 1 | 0 | |a Haider, FA |e author |
| 700 | 1 | 0 | |a Saafie, S |e author |