Low threshold ion-implanted Nd:YAG channel waveguide laser

The first channel waveguide laser in Nd:YAG showing a threshold reduction of 20 times compared to a planar waveguide is described. With diode pumping this ion-implanted waveguide laser has been operated with absorbed power thresholds as low as ~500µW in good agreement with theoretical expectation. O...

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Bibliographic Details
Main Authors: Field, S.J (Author), Hanna, D.C (Author), Large, A.C (Author), Shepherd, D.P (Author), Tropper, A.C (Author), Chandler, P.J (Author), Townsend, P.D (Author), Zhang, L. (Author)
Format: Article
Language:English
Published: 1991.
Subjects:
Online Access:Get fulltext
LEADER 00935 am a22002053u 4500
001 78556
042 |a dc 
100 1 0 |a Field, S.J.  |e author 
700 1 0 |a Hanna, D.C.  |e author 
700 1 0 |a Large, A.C.  |e author 
700 1 0 |a Shepherd, D.P.  |e author 
700 1 0 |a Tropper, A.C.  |e author 
700 1 0 |a Chandler, P.J.  |e author 
700 1 0 |a Townsend, P.D.  |e author 
700 1 0 |a Zhang, L.  |e author 
245 0 0 |a Low threshold ion-implanted Nd:YAG channel waveguide laser 
260 |c 1991. 
856 |z Get fulltext  |u https://eprints.soton.ac.uk/78556/1/247P.pdf 
520 |a The first channel waveguide laser in Nd:YAG showing a threshold reduction of 20 times compared to a planar waveguide is described. With diode pumping this ion-implanted waveguide laser has been operated with absorbed power thresholds as low as ~500µW in good agreement with theoretical expectation. Output slope efficiencies of ~29% have also been demonstrated. 
655 7 |a Article