Low threshold ion-implanted Nd:YAG channel waveguide laser

The first channel waveguide laser in Nd:YAG showing a threshold reduction of 20 times compared to a planar waveguide is described. With diode pumping this ion-implanted waveguide laser has been operated with absorbed power thresholds as low as ~500µW in good agreement with theoretical expectation. O...

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Bibliographic Details
Main Authors: Field, S.J (Author), Hanna, D.C (Author), Large, A.C (Author), Shepherd, D.P (Author), Tropper, A.C (Author), Chandler, P.J (Author), Townsend, P.D (Author), Zhang, L. (Author)
Format: Article
Language:English
Published: 1991.
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Summary:The first channel waveguide laser in Nd:YAG showing a threshold reduction of 20 times compared to a planar waveguide is described. With diode pumping this ion-implanted waveguide laser has been operated with absorbed power thresholds as low as ~500µW in good agreement with theoretical expectation. Output slope efficiencies of ~29% have also been demonstrated.