Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:YAG waveguide

Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:YAG waveguide

We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active lay...

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Bibliographic Details
Main Authors: Hanna, D.C (Author), Large, A.C (Author), Shepherd, D.P (Author), Tropper, A.C (Author), Chartier, I. (Author), Ferrand, B. (Author), Pelenc, D. (Author)
Format: Article
Language:English
Published: 1993.
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Summary:We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.

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