Predictions of free-carrier electroabsorption and electrorefraction in germanium

Germanium is becoming an important material for mid-infrared photonics, but the modulation mechanisms in Ge are not yet well understood. In this paper, we estimate the size of free-carrier electroabsorption and electrorefraction effects in germanium across the 2 to 16 µm wavelength range at 300 K. T...

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Bibliographic Details
Main Authors: Nedeljković, Miloš (Author), Soref, Richard (Author), Mashanovich, Goran Z. (Author)
Format: Article
Language:English
Published: 2015-06-01.
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Online Access:Get fulltext
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100 1 0 |a Nedeljković, Miloš  |e author 
700 1 0 |a Soref, Richard  |e author 
700 1 0 |a Mashanovich, Goran Z.  |e author 
245 0 0 |a Predictions of free-carrier electroabsorption and electrorefraction in germanium 
260 |c 2015-06-01. 
856 |z Get fulltext  |u https://eprints.soton.ac.uk/385690/1/stamp.jsp_tp%253D%2526arnumber%253D7094964%2526tag%253D1 
520 |a Germanium is becoming an important material for mid-infrared photonics, but the modulation mechanisms in Ge are not yet well understood. In this paper, we estimate the size of free-carrier electroabsorption and electrorefraction effects in germanium across the 2 to 16 µm wavelength range at 300 K. The predictions are based as much as possible upon experimental absorption data from the literature and are supported by extrapolations from experimental data using first-principle quantum theoretical modeling. We find that free-carrier absorption is substantially stronger in Ge than in Si. 
540 |a other 
655 7 |a Article