Defect-induced Fermi level pinning and suppression of ambipolar behaviour in graphene
We report on systematic study of electronic transport behaviour of low-biased, disordered graphene nanowires. We reveal the emergence of unipolar transport as the defect concentration increases beyond 0.3% where an almost insulating behaviour is observed for n-type conduction whilst a metallic behav...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2015-05-21.
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| Subjects: | |
| Online Access: | Get fulltext |