Fabrication and characterization of high-contrast mid-infrared GeTe<sub>4</sub> channel waveguides

Fabrication and characterization of high-contrast mid-infrared GeTe<sub>4</sub> channel waveguides

We report the fabrication and characterization of high index contrast (Δn ~ 0.9) GeTe<sub>4</sub> channel waveguides on ZnSe substrate for evanescent-field based biosensing applications in the mid-infrared spectral region. GeTe<sub>4</sub> films were deposited by RF sputterin...

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Main Authors: Mittal, Vinita (Author), Aghajani, Armen (Author), Carpenter, Lewis (Author), Gates, James C. (Author), Butement, Jonathan (Author), Smith, Peter G.R (Author), Wilkinson, James S. (Author), Murugan, Ganapathy Senthil (Author)
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Language:English
Published: 2015-05-01.
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Summary:We report the fabrication and characterization of high index contrast (Δn ~ 0.9) GeTe<sub>4</sub> channel waveguides on ZnSe substrate for evanescent-field based biosensing applications in the mid-infrared spectral region. GeTe<sub>4</sub> films were deposited by RF sputtering and characterized for their structure, composition, transparency and dispersion. The lift-off technique was used to pattern the waveguide channels. Waveguiding between 2.5-3.7 µm and 6.4-7.5 µm was demonstrated and mode intensity profile and estimated propagation losses are given for the 3.5 µm wavelength.

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