Mid-infrared wavelength division (de)multiplexer using an interleaved angled multimode interferometer on the silicon-on-insulator platform
A low-cost and high-performance wavelength division (de)multiplexing structure in the mid-IR wavelength range is demonstrated on the silicon-on-insulator platform using an interleaved angled multimode interferometer (AMMI). As compared to a single AMMI, the channel count was doubled and the channel...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2014-03-15.
|
| Subjects: | |
| Online Access: | Get fulltext Get fulltext |
| LEADER | 01567 am a22002293u 4500 | ||
|---|---|---|---|
| 001 | 367854 | ||
| 042 | |a dc | ||
| 100 | 1 | 0 | |a Hu, Y. |e author |
| 700 | 1 | 0 | |a Li, T. |e author |
| 700 | 1 | 0 | |a Thomson, D.J. |e author |
| 700 | 1 | 0 | |a Chen, X. |e author |
| 700 | 1 | 0 | |a Soler Penadés, Jordi |e author |
| 700 | 1 | 0 | |a Khokhar, A.Z. |e author |
| 700 | 1 | 0 | |a Mitchell, C.J. |e author |
| 700 | 1 | 0 | |a Reed, G.T. |e author |
| 700 | 1 | 0 | |a Mashanovich, G.Z. |e author |
| 245 | 0 | 0 | |a Mid-infrared wavelength division (de)multiplexer using an interleaved angled multimode interferometer on the silicon-on-insulator platform |
| 260 | |c 2014-03-15. | ||
| 856 | |z Get fulltext |u https://eprints.soton.ac.uk/367854/1/__userfiles.soton.ac.uk_Users_nl2_mydesktop_Slabakova_Chemistry_articles_MIR%2520IAMMI%2520Optics%2520Letters%2520-%2520submitted.pdf | ||
| 856 | |z Get fulltext |u https://eprints.soton.ac.uk/367854/2/__userfiles.soton.ac.uk_Users_nl2_mydesktop_Slabakova_Chemistry_articles_ol-39-6-1406.pdf | ||
| 520 | |a A low-cost and high-performance wavelength division (de)multiplexing structure in the mid-IR wavelength range is demonstrated on the silicon-on-insulator platform using an interleaved angled multimode interferometer (AMMI). As compared to a single AMMI, the channel count was doubled and the channel spacing halved with negligible extra insertion loss and crosstalk and with only a slight increase in device footprint. The device requires only single lithography and etching steps for fabrication. Potential is also shown for achieving improved performance with further optimized design. | ||
| 655 | 7 | |a Article | |