Mid-infrared thermo-optic modulators in SoI

Mid-infrared thermo-optic modulators in SoI

We report experimental results for thermo-optic modulators in silicon-on-insulator (SoI) material operating at the wavelength of 3.8 µm. These devices are based on asymmetric Mach-Zehnder interferometers (MZIs) with aluminum heaters placed above one MZI arm. The SoI rib waveguides with 400-nm Si dev...

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Bibliographic Details
Main Authors: Nedeljković, Miloš (Author), Stanković, Stevan (Author), Mitchell, Colin J. (Author), Khokhar, Ali Z. (Author), Reynolds, Scott (Author), Thomson, David J. (Author), Gardes, Frederic Y. (Author), Littlejohns, Callum (Author), Reed, Graham T. (Author), Mashanovich, Goran Z. (Author)
Format: Article
Language:English
Published: 2014-07-01.
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Summary:We report experimental results for thermo-optic modulators in silicon-on-insulator (SoI) material operating at the wavelength of 3.8 µm. These devices are based on asymmetric Mach-Zehnder interferometers (MZIs) with aluminum heaters placed above one MZI arm. The SoI rib waveguides with 400-nm Si device layer thickness are used. Devices with conventional straight MZI arm and spiral MZI arm geometries are investigated. Straight-arm MZIs exhibited higher modulation depths, of up to 30.5 dB, whereas spiral-arm MZIs required smaller switching powers, as low as 47 mW. Measured -3 dB bandwidths were up to 23.8 kHz and did not vary significantly with device configuration.

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